Name
Abstract | ||
|---|---|---|
TaN\Ta is the excellent material against copper diffusion, and is widely used as Cu diffusion barrier in Complementary Metal-Oxide-Semiconductor (CMOS) Back End of Line (Cu-BEOL) process. Due to its good electrical and thermal property, TaN is also evaluated as electrode material for Micro-Electro-Mechanical Systems (MEMS)/sensor application. In this work, CMOS compatible MEMS based bolometer process with post-interconnect CMOS-MEMS single chip integration scheme was developed on 200 mm standard CMOS Cu BEOL, and TaN thin film was used as key electrode material in micro-bridge structure. The micro-bridge structure, with sensing resistor on surface of the micro-bridge, forms a resonant cavity for IR absorption. There are only several layers of thin film on the micro-bridge, and stress of the electrode layer play very important role to determine the performance of the micro-bridge. Additionally sheet resistance of TaN electrode should be controlled at around 377 Ohm/SQ to match the free space impedance, which is much higher than CMOS baseline process. Low stress and high resistivity TaN film was developed with thickness of 200 angstrom and compressive stress of about 900 MPa as best condition. From the electrical and physical data, the optimized TaN film process can well match this application. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1142/S0218126613400173 | JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS |
Keywords | Field | DocType |
MEMS,TaN,in-film stress,PVD | Microelectromechanical systems,Computer science,Diffusion barrier,Back end of line,Electronic engineering,CMOS,Resistor,Sheet resistance,Thin film,Electrode | Journal |
Volume | Issue | ISSN |
22 | SP9 | 0218-1266 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiaoxu Kang | 1 | 23 | 5.52 |
| Qingyun Zuo | 2 | 4 | 2.43 |
| Chao Yuan | 3 | 4 | 2.43 |
| Shoumian Chen | 4 | 0 | 1.69 |
| Yuhang Zhao | 5 | 3 | 1.13 |