Name
Abstract | ||
|---|---|---|
A two-phase boosted voltage (V/sub PP/) generator circuit was proposed for use in gigabit DRAMs. It reduced the maximum gate-oxide voltage of pass transistor and the lower limit of supply voltage to V/sub PP/ and V/sub TN/, respectively, while those for the conventional charge-pump circuit are V/sub PP/+V/sub DD/ and 1.5 V/sub TN/ respectively. Also, the pumping current was increased in the new ci... |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1109/JSSC.2003.817592 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Random access memory,Charge pumps,Threshold voltage,Pulse generation,Circuit testing,Voltage control,CMOS technology,MOSFETs,Ring oscillators,Low voltage | Journal | 38 |
Issue | ISSN | Citations |
10 | 0018-9200 | 2 |
PageRank | References | Authors |
0.51 | 1 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Seong-Ik Cho | 1 | 65 | 6.84 |
| Junghwan Lee | 2 | 50 | 12.51 |
| Hong-june Park | 3 | 465 | 72.93 |
| Gyu-Ho Lim | 4 | 4 | 1.36 |
| Young-Hee Kim | 5 | 2 | 1.86 |