Title
Interconnect Thermal Modeling For Accurate Simulation Of Circuit Timing And Reliability
Abstract
We apply three-dimensional finite element analysis to study the thermal coupling between nearby interconnects. We find that the temperature rise in current-carrying lines is significantly influenced by a dense array of lines in a nearby metal level. In contrast, thermal coupling between just two neighboring parallel lines is insignificant for most geometries. Design rules for average root-mean-square current density are provided for specific geometries given the requirement that the interconnect temperature be no more than 5 degrees C above the substrate temperature, Semi-empirical formulae for coupling effects are presented based on the numerical results. A procedure is proposed to implement the formulae in computer-aided design tools.
Year
DOI
Venue
2000
10.1109/43.828548
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Keywords
DocType
Volume
interconnect, self-heating, thermal resistance
Journal
19
Issue
ISSN
Citations 
2
0278-0070
12
PageRank 
References 
Authors
3.62
2
4
Name
Order
Citations
PageRank
Danqing Chen1145.52
Erhong Li2145.52
Elyse Rosenbaum36121.99
Sung-Mo Steve Kang41198213.14