Paper Info
Title
Transistor and circuit design for 100-200-GHz ICs
Abstract
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, including a simultaneous 450 GHz f/sub /spl tau// and 490 GHz f/sub max/ DHBT, 172-GHz amplifiers with 8.3-dBm output power and 4.5-dB associated power ga...
Year
DOI
Venue
2005
10.1109/JSSC.2005.854609
IEEE Journal of Solid-State Circuits
Keywords
DocType
Volume
Circuit synthesis,Silicon germanium,Germanium silicon alloys,Indium phosphide,Power amplifiers,Electrons,Heterojunction bipolar transistors,DH-HEMTs,Power generation,Frequency conversion
Journal
40
Issue
ISSN
Citations 
10
0018-9200
2
PageRank 
References 
Authors
0.87
0
16
Name
Order
Citations
PageRank
Zach Griffith1235.45
Yingda Dong221.21
Dennis Scott320.87
Yun Wei420.87
Navin Parthasarathy521.21
Mattias Dahlström620.87
Christoph Kadow720.87
Vamsi Paidi821.21
Mark J. W. Rodwell922329.72
M. Urteaga10167.43
Richard Pierson1121.55
Petra Rowell12112.67
Bobby Brar1321.21
Sangmin Lee14338.16
Nguyen X. Nguyen1520.87
Chahn Nguyen1620.87