Title
160Gb/s Serial Line Rates in a Monolithic Optoelectronic Multistage Interconnection Network
Abstract
We demonstrate very high line rate serial 160 Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6 dB and 1.2 dB are observed for two stages and four stages respectively in the monolithic circuits at 160 Gb/s per path.
Year
DOI
Venue
2009
10.1109/HOTI.2009.10
Hot Interconnects
Keywords
Field
DocType
monolithic circuit,very-high line rate serial data transmission,monolithic integrated circuits,leading edge,semiconductor optical amplifier,monolithic switching circuit complexity,bit error rate study,high line rate serial,highest reported line rate,monolithically cascaded switching networks,integrated optoelectronics,monolithic optoelectronic multistage interconnection network,monolithic optoelectronic multistage interconnection,bit rate 160 gbit/s,semiconductor optical amplifiers,optical interconnections,modest signal degradation level,switching networks,power penalty,modest level,data transmission,optical switches,soa-based multistage switching matrix,error statistics,serial line rates,optical fibers,optical switch,optical amplifiers,circuit complexity,bit error rate,multiplexing
Optical amplifier,Telecommunications,Data transmission,Optical switch,Circuit complexity,Computer science,Parallel computing,Electronic engineering,Interconnection,Multiplexing,Electronic circuit,Bit error rate
Conference
ISSN
ISBN
Citations 
1550-4794 E-ISBN : 978-0-7695-3847-1
978-0-7695-3847-1
0
PageRank 
References 
Authors
0.34
0
13