Name
Abstract | ||
|---|---|---|
In conventional sputter etching, heterogeneous surfaces are eroded at generally unpredictable rates. The reasons for this are discussed and a solution to the problem is given: Based on control of redeposition, the technique involves the use of a device called a “catcher,” which is placed near the target of the sputtering chamber to trap re-emitted particles. Experiments are described which confirm the effectiveness of the approach. |
Year | DOI | Venue |
|---|---|---|
1972 | 10.1147/rd.161.0067 | IBM Journal of Research and Development |
Keywords | Field | DocType |
wide current range,high density,successful design,high speed,heterogeneous surface,new silicon process technology,monolithic memory circuit | Sputtering,Engineering physics,Etching,Computer science,Electronic engineering | Journal |
Volume | Issue | ISSN |
16 | 1 | 0018-8646 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| L. I. Maissel | 1 | 87 | 51.06 |
| C. L. Standley | 2 | 0 | 0.34 |
| L. V. Gregor | 3 | 0 | 0.34 |