Paper Info
Title
Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LPij modes
Abstract
A comprehensive fully self-consistent optical-electrical-thermal-recombination model of the 650-nm oxide-confined GaAs-based GaInP/AlGaInP vertical-cavity surface-emitting diode lasers (VCSELs) is used to determine their anticipated room-temperature (RT) continuous-wave (CW) performance characteristics. As expected, for the devices with very large active regions, higher-order transverse LP"i"j modes exhibit the lowest lasing thresholds. However, the desired single fundamental LP"0"1 mode operation remains dominating one for relatively large active regions of diameters up to as much as 10mm. Therefore, the 650-nm GaInP/AlGaInP QW VCSELs have been found to offer a very promising RT CW performance as sources of carrier radiation for the optical communication taking advantage of plastic (polymer) optical fibers (POFs).
Year
DOI
Venue
2008
10.1016/j.mejo.2007.07.049
Microelectronics Journal
Keywords
DocType
Volume
large active region,650-nm GaInP,650-nm oxide-confined GaAs-based GaInP,AlGaInP QW VCSELs,AlGaInP vertical-cavity,RT CW performance,optical communication,optical fiber,performance characteristic,single fundamental LP,computer simulation,various transverse LPij mode
Journal
39
Issue
ISSN
Citations 
3-4
0026-2692
1
PageRank 
References 
Authors
0.40
0
3
Name
Order
Citations
PageRank
Lukasz Piskorski111.75
Robert P. Sarzała220.79
Włodzimierz Nakwaski322.48