Title
Impact of deep-trench-isolation-sharing techniques on ultrahigh-speed digital systems
Abstract
In the past, the large area of heterojunction bipolar transistors (HBTs) in silicon germanium (SiGe) bipolar complementary metal-oxide-semiconductor (BiCMOS) processes has prevented them from being widely used in ultrahigh-speed digital systems. The consequent longer interconnects among HBTs also offset the speed advantage of HBTs. In this brief, four deep trench isolation sharing (DTIS) methods are proposed to significantly reduce the HBT layout area. The 2 × 2 HBT layout area can be reduced by 20%-42%, and large-scale HBT system layouts can be reduced by 24%-48% or even further. Two IBM 0.18-µm SiGe 7HP chips based on Xilinx 6200 digital configurable logic blocks (CLBs) and logic cells were fabricated for verification. The maximum difference between measurement and postlayout simulation is 6.1%. Compared with the traditional layout implementation, the DTIS layout improved the system speed by 22% due to shorter interconnects among HBTs.
Year
DOI
Venue
2009
10.1109/TCSII.2009.2030535
IEEE Trans. on Circuits and Systems
Keywords
Field
DocType
bipolar complementary metal-oxide-semiconductor,dtis layout,consequent longer interconnects,traditional layout implementation,large-scale hbt system layout,heterojunction bipolar transistor,digital configurable logic block,hbt layout area,deep-trench-isolation-sharing technique,logic cell,ultrahigh-speed digital system,large area,chip,field programmable gate arrays,digital signal processing,integrated circuit layout,radio frequency,complementary metal oxide semiconductor,diffusion tensor imaging
Integrated circuit layout,Digital signal processing,BiCMOS,Field-programmable gate array,Electronic engineering,Bipolar junction transistor,Heterojunction bipolar transistor,Electrical engineering,Silicon-germanium,Mathematics,AND gate
Journal
Volume
Issue
ISSN
56
10
1549-7747
Citations 
PageRank 
References 
2
0.44
1
Authors
2
Name
Order
Citations
PageRank
Kuan Zhou121.45
John F. McDonald211633.09