Name
Abstract | ||
|---|---|---|
As transistor gate lengths are scaled towards the 10-nm range, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot spots in the transistor drain region, which may increase the drain series and source injection electrical resistances. Such trends are accelerated by the introduction of novel materials and nontraditional... |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1109/JPROC.2006.879794 | Proceedings of the IEEE |
Keywords | Field | DocType |
Conducting materials,Geometry,Surface impedance,Surface resistance,Thermal resistance,Thermal engineering,Microprocessors,Design engineering,Electric resistance,Acceleration | Nanotechnology,Nanoelectronics,Field-effect transistor,Heat transfer,Thermal conduction,Transistor,MOSFET,Optoelectronics,Materials science,Thermal resistance,Ballistic conduction | Journal |
Volume | Issue | ISSN |
94 | 8 | 0018-9219 |
Citations | PageRank | References |
15 | 1.78 | 2 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Eric Pop | 1 | 50 | 12.07 |
| Sanjiv Sinha | 2 | 18 | 2.94 |
| Kenneth E. Goodson | 3 | 43 | 5.13 |