Title
Sinusoidal shaping of the ISF in LC oscillators
Abstract
A new method to decrease the phase noise of the sinusoidal oscillators is proposed. The proposed method is based on using a dynamic transistor biasing in a typical oscillator topology. This method uses the oscillator impulse sensitivity function (ISF) shaping to reduce the sensitivity of the oscillator to the transistor noise and as a result reducing the oscillator phase noise. A 1.8 GHz, 1.8 V designed oscillator based on the proposed method shows a phase noise of -130.3dBc-Hz at 1 MHz offset frequency, thereby showing about 6 dB phase noise decreasing in comparison with the typical constant bias topology. This result is obtained from the simulation based on 0.18u CMOS technology and on-chip spiral inductor with a quality factor equal to 8. Copyright © 2007 John Wiley & Sons, Ltd.
Year
DOI
Venue
2008
10.1002/cta.v36:7
I. J. Circuit Theory and Applications
Keywords
Field
DocType
typical oscillator topology,oscillator phase noise,oscillator impulse sensitivity function,lc oscillator,db phase noise,new method,phase noise,sinusoidal oscillator,dynamic transistor,transistor noise,oscillations
Colpitts oscillator,Delay line oscillator,Variable-frequency oscillator,Control theory,Oscillator phase noise,Phase noise,Vackář oscillator,Voltage-controlled oscillator,Electronic engineering,RC oscillator,Mathematics
Journal
Volume
Issue
ISSN
36
7
0098-9886
Citations 
PageRank 
References 
5
0.62
7
Authors
2
Name
Order
Citations
PageRank
Abumoslem Jannesari1279.88
Mahmoud Kamarei28015.83