Abstract | ||
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A new method to decrease the phase noise of the sinusoidal oscillators is proposed. The proposed method is based on using a dynamic transistor biasing in a typical oscillator topology. This method uses the oscillator impulse sensitivity function (ISF) shaping to reduce the sensitivity of the oscillator to the transistor noise and as a result reducing the oscillator phase noise. A 1.8 GHz, 1.8 V designed oscillator based on the proposed method shows a phase noise of -130.3dBc-Hz at 1 MHz offset frequency, thereby showing about 6 dB phase noise decreasing in comparison with the typical constant bias topology. This result is obtained from the simulation based on 0.18u CMOS technology and on-chip spiral inductor with a quality factor equal to 8. Copyright © 2007 John Wiley & Sons, Ltd. |
Year | DOI | Venue |
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2008 | 10.1002/cta.v36:7 | I. J. Circuit Theory and Applications |
Keywords | Field | DocType |
typical oscillator topology,oscillator phase noise,oscillator impulse sensitivity function,lc oscillator,db phase noise,new method,phase noise,sinusoidal oscillator,dynamic transistor,transistor noise,oscillations | Colpitts oscillator,Delay line oscillator,Variable-frequency oscillator,Control theory,Oscillator phase noise,Phase noise,Vackář oscillator,Voltage-controlled oscillator,Electronic engineering,RC oscillator,Mathematics | Journal |
Volume | Issue | ISSN |
36 | 7 | 0098-9886 |
Citations | PageRank | References |
5 | 0.62 | 7 |
Authors | ||
2 |
Name | Order | Citations | PageRank |
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Abumoslem Jannesari | 1 | 27 | 9.88 |
Mahmoud Kamarei | 2 | 80 | 15.83 |