Name
Abstract | ||
|---|---|---|
Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1155/2001/14941 | VLSI DESIGN |
Keywords | Field | DocType |
drift-diffusion,Schrodinger,piezoelectric,tunnelling,nitrides,heterostructure | Quantum tunnelling,Gallium nitride,Wide-bandgap semiconductor,Spontaneous emission,Diode,Green-light,Light-emitting diode,Optoelectronics,Quantum well,Physics | Journal |
Volume | Issue | ISSN |
13 | SP1-4 | 1065-514X |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| D. Oriato | 1 | 0 | 0.34 |
| Alison B. Walker | 2 | 0 | 0.68 |
| W. N. Wang | 3 | 0 | 0.34 |