Paper Info
Title
Effects of hot carrier stress on the RF performance in SOI MOSFETs.
Abstract
This paper presents new experimental results on the DC hot carrier stress effects on the RF performance of SOI MOSFETs. The RF performance degradation in terms of cut-off frequency, minimum noise figure, and RF power has been measured and analyzed. The reduction of transconductance is turned out to be one of the major causes of the RF performance degradation. The measurement also shows that the RF performance degradation is more significant than the DC performance degradation. Especially, the degradation of minimum noise figure is the most significant. (C) 2004 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2004
10.1016/j.microrel.2004.07.083
MICROELECTRONICS RELIABILITY
Field
DocType
Volume
Silicon on insulator,Direct current,Noise figure,Degradation (geology),Electronic engineering,Engineering,Transconductance,MOSFET,Cutoff frequency,RF power amplifier
Journal
44
Issue
ISSN
Citations 
9-11
0026-2714
0
PageRank 
References 
Authors
0.34
0
3
Name
Order
Citations
PageRank
Byung-jin Lee131.10
Kyosun Kim218718.28
Jong-Tae Park314434.45