Name
Title | ||
|---|---|---|
The Combination Of Equipment Scale And Feature Scale Models For Chemical Vapor Deposition Via A Homogenization Technique |
Abstract | ||
|---|---|---|
In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface, The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included. |
Year | DOI | Venue |
|---|---|---|
1998 | 10.1155/1998/24073 | VLSI DESIGN |
Keywords | DocType | Volume |
homogenization,asymptotic analysis,finite differences,partial differential equations,chemical vapor deposition,chemical engineering | Journal | 6 |
Issue | ISSN | Citations |
1-4 | 1065-514X | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Matthias K. Gobbert | 1 | 31 | 10.72 |
| Timothy S. Cale | 2 | 10 | 3.17 |
| Christian A. Ringhofer | 3 | 76 | 11.62 |