Name
Abstract | ||
|---|---|---|
An analytic model for the I-V characteristics of a symmetric, undoped, double gate MOSFET is presented. The model is two-dimensional and extends recent work by Chen and Taur. The formulae involve the LambertW function recently used by Ortiz-Conde to obtain threshold voltage approximations of an undoped single gate MOSFET. The drift diffusion equations are also solved numerically and our approximate solution for the Fermi potential is shown to be in close agreement with the exact numeric solution. We present a compact model for the complete I-V characteristics of an undoped double gate MOSFET. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.matcom.2007.10.009 | Mathematics and Computers in Simulation |
Keywords | Field | DocType |
analytic model,exact numeric solution,undoped double-gate,analytic solution,approximate solution,undoped double gate,undoped single gate,i-v characteristic,double gate mosfet,fermi potential,complete i-v characteristic,double gate,85.30.t,compact model,lambert function,threshold voltage | Fermi Gamma-ray Space Telescope,Mathematical optimization,Mathematical analysis,Lambert W function,Approximations of π,Analytic solution,MOSFET,Threshold voltage,Analytic model,Approximate solution,Mathematics | Journal |
Volume | Issue | ISSN |
79 | 4 | Mathematics and Computers in Simulation |
Citations | PageRank | References |
1 | 0.56 | 1 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hedley C. Morris | 1 | 1 | 0.89 |
| Alfonso Limon | 2 | 1 | 2.58 |