Name
Abstract | ||
|---|---|---|
A dual-mode, triple-band RF front-end receiver for GSM900, DCS800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 mu m CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9 dB, 31 d13 for the DCS 1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1093/ietele/e88-c.6.1218 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
CMOS RF receiver, dual-mode, GSM, W-CDMA | RF front end,Low-noise amplifier,GSM,Voltage,Noise figure,Electronic engineering,CMOS,Chip,Engineering,Code division multiple access,Electrical engineering | Journal |
Volume | Issue | ISSN |
E88C | 6 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 4 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chun-Lin Ko | 1 | 3 | 2.39 |
| Ming-Ching Kuo | 2 | 2 | 2.21 |
| Chien-Nan Kuo | 3 | 41 | 8.22 |