Title
Transport and noise properties of CdTe(Cl) crystals
Abstract
Experimental studies of transport and noise characteristics of CdTe (Cl doped) crystals, prepared by travelling heater method, have been carried out. The basic material is of p-type with p=1.8×1014 m−3, μh=0.0065 m2V−1s−1, μe=0.13 m2V−1s−1. The current and noise spectral density was measured as a function of the sample illumination, voltages across the sample and incident light wavelengths. Two types of effective charge carrier mobility are assumed: namely, the effective transport mobility, which is 0.065 m2V−1s−1 and the effective noise mobility, which reaches a value of 0.125 m2V−1s−1, both for high illumination. Under the same conditions, the density of light generated charge carrier pairs is 1.7×1015 m−3. Experimental results are in a good agreement with the four-level recombination model. The values of 1/f noise parameter α range from 4×10−4 to 2.5×10−3. The α parameter grows with almost the photocurrent square root. The signal-to-noise ratio improves if the electric field strength in the CdTe detector is set to a higher value.
Year
DOI
Venue
2001
10.1016/S0026-2714(00)00200-6
Microelectronics Reliability
Keywords
Field
DocType
spectral density,signal to noise ratio,electric field
Charge carrier,Photocurrent,Analytical chemistry,Electric field,Noise (electronics),Doping,Chemistry,Electronic engineering,Noise spectral density,Effective nuclear charge,Electron mobility
Journal
Volume
Issue
ISSN
41
3
0026-2714
Citations 
PageRank 
References 
0
0.34
0
Authors
3
Name
Order
Citations
PageRank
P. Schauer100.34
J Sikula200.68
P. Moravec300.34