Name
Title | ||
|---|---|---|
Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain |
Abstract | ||
|---|---|---|
A measurement setup for the characterization of very-fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with a guard ring in a 65nm and 130nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1016/j.microrel.2009.06.056 | Microelectronics Reliability |
Keywords | Field | DocType |
time domain,transient response,electrostatic discharge,bjt,bipolar transistors,cmos technology | Time domain,Transient response,Electrostatic discharge,Diode,CMOS,Electronic engineering,Guard ring,Bipolar junction transistor,Engineering,Optoelectronics,Electrical engineering,Charged-device model | Journal |
Volume | Issue | ISSN |
49 | 12 | 0026-2714 |
Citations | PageRank | References |
4 | 1.14 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jean-Robert Manouvrier | 1 | 4 | 1.14 |
| Pascal Fonteneau | 2 | 4 | 2.15 |
| Charles-Alexandre Legrand | 3 | 4 | 1.14 |
| Pascal Nouet | 4 | 31 | 14.07 |
| Florence Azaïs | 5 | 4 | 1.14 |