Title
InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz.
Abstract
We report on the development of a 0.25-μm InP HBT IC technology for lower end of the THz frequency band (0.3-3 THz). Transistors demonstrate an extrapolated fmax of >;800 GHz while maintaining a common-emitter breakdown voltage (BVCEO) >;4 V. The transistors have been integrated in a full IC process that includes three-levels of interconnects, and backside processing. The technology has been utili...
Year
DOI
Venue
2011
10.1109/JSSC.2011.2163213
IEEE Journal of Solid-State Circuits
Keywords
Field
DocType
Oscillators,Heterojunction bipolar transistors,Indium phosphide,Bandwidth,Integrated circuit modeling
Phase-locked loop,Frequency band,Computer science,Electronic engineering,Breakdown voltage,Bandwidth (signal processing),Terahertz radiation,Transistor,Heterojunction bipolar transistor,Electrical engineering,Optoelectronics,Amplifier
Journal
Volume
Issue
ISSN
46
10
0018-9200
Citations 
PageRank 
References 
9
1.46
4
Authors
13
Name
Order
Citations
PageRank
Munkyo Seo1739.85
M. Urteaga2167.43
Jonathan Hacker3162.56
Adam Young491.46
Zach Griffith5235.45
Vibhor Jain6263.10
Richard Pierson791.46
Petra Rowell8112.67
Anders Skalare992.13
Alejandro Peralta1091.46
Robert Lin11374.32
David Pukala1291.80
Mark J. W. Rodwell1322329.72