Name
Title | ||
|---|---|---|
Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys |
Abstract | ||
|---|---|---|
An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn.2Mg.8S.64Se.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1016/j.mejo.2008.06.024 | Microelectronics Journal |
Keywords | Field | DocType |
sacrificial layer,znse quantum,etch release layer,znmgsse alloy,wide bandgap ii-vi heterostructures,wide bandgap barrier,epitaxial lift-off technique,lattice-matched mgs,emission wavelength,etch-resistant alloy,epitaxial lift-off technology,gaas substrate,quantum well,quantum wells | Molecular beam epitaxy,Wide-bandgap semiconductor,Etching,Band gap,Electronic engineering,Engineering,Heterojunction,Quantum well,Epitaxy,Photoluminescence | Journal |
Volume | Issue | ISSN |
40 | 3 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| R. Moug | 1 | 0 | 0.34 |
| C. Bradford | 2 | 0 | 0.34 |
| A. Curran | 3 | 0 | 0.34 |
| F. Izdebski | 4 | 0 | 0.34 |
| I. Davidson | 5 | 0 | 0.34 |
| K. A. Prior | 6 | 0 | 0.34 |
| R. J. Warburton | 7 | 1 | 0.82 |