Name
Abstract | ||
|---|---|---|
In this paper, a new CMOS wideband low noise amplifier (LNA) is proposed that is operated within a range of 470MHz-3GHz with current reuse, mirror bias and a source inductive degeneration technique. A two-stage topology is adopted to implement the LNA based on the TSMC 0.18-@mm RF CMOS process. Traditional wideband LNAs suffer from a fundamental trade-off in noise figure (NF), gain and source impedance matching. Therefore, we propose a new LNA which obtains good NF and gain flatness performance by integrating two kinds of wideband matching techniques and a two-stage topology. The new LNA can also achieve a tunable gain at different power consumption conditions. The measurement results at the maximum power consumption mode show that the gain is between 11.3 and 13.6dB, the NF is less than 2.5dB, and the third-order intercept point (IIP3) is about -3.5dBm. The LNA consumes maximum power at about 27mW with a 1.8V power supply. The core area is 0.55x0.95mm^2. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1016/j.vlsi.2010.11.002 | Integration |
Keywords | Field | DocType |
tunable gain,maximum power consumption mode,gain flatness performance,different power consumption condition,two-stage topology,gain control,new lna,good nf,power supply,maximum power,cmos wideband low noise,noise figure,impedance matching,low noise amplifier | Wideband,Output impedance,Low-noise amplifier,Current mirror,Computer science,Impedance matching,Noise figure,CMOS,Electronic engineering,Automatic gain control,Electrical engineering | Journal |
Volume | Issue | ISSN |
44 | 2 | Integration, the VLSI Journal |
Citations | PageRank | References |
6 | 0.62 | 11 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| San-Fu Wang | 1 | 20 | 7.21 |
| Yuh-Shyan Hwang | 2 | 137 | 29.85 |
| Shou-Chung Yan | 3 | 6 | 0.62 |
| Jiann-Jong Chen | 4 | 124 | 24.08 |