Title
Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress
Abstract
The transmission line pulse method (TLP) is used to characterise the reliability of bolometric GaAs microwave power-sensors. Two degradation mechanisms are identified during the degradation process of the absorbing NiCr termination, in which the input power is converted into heat. Simulations and a material analysis have been performed in order to characterise the observed degradation mechanisms.
Year
DOI
Venue
2003
10.1016/S0026-2714(03)00327-5
Microelectronics Reliability
Field
DocType
Volume
Electronic engineering,Engineering
Journal
43
Issue
ISSN
Citations 
9
0026-2714
0
PageRank 
References 
Authors
0.34
0
5
Name
Order
Citations
PageRank
C. Sydlo101.35
Kabula Mutamba222.01
L. Divac Krnic300.34
B. Mottet401.35
H.L. Hartnagel501.69