Title | ||
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Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress |
Abstract | ||
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The transmission line pulse method (TLP) is used to characterise the reliability of bolometric GaAs microwave power-sensors. Two degradation mechanisms are identified during the degradation process of the absorbing NiCr termination, in which the input power is converted into heat. Simulations and a material analysis have been performed in order to characterise the observed degradation mechanisms. |
Year | DOI | Venue |
---|---|---|
2003 | 10.1016/S0026-2714(03)00327-5 | Microelectronics Reliability |
Field | DocType | Volume |
Electronic engineering,Engineering | Journal | 43 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
---|---|---|---|
C. Sydlo | 1 | 0 | 1.35 |
Kabula Mutamba | 2 | 2 | 2.01 |
L. Divac Krnic | 3 | 0 | 0.34 |
B. Mottet | 4 | 0 | 1.35 |
H.L. Hartnagel | 5 | 0 | 1.69 |