Title
Transient Simulation of Silicon Devices and Circuits
Abstract
In this paper, we present an overview of the physical principles and numerical methods used to solve the coupled system of nonlinear partial differential equations that model the transient behavior of silicon VLSI device structures. We also describe how the same techniques are applicable to circuit simulation. A composite linear multistep formula is introduced as the time-integration scheme. Newton-iterative methods are exploited to solve the nonlinear equations that arise at each time step. We also present a simple data structure for nonsymmetric matrices with symmetric nonzero structures that facilitates iterative or direct methods with substantial efficiency gains over other storage schemes. Several computational examples, including a CMOS latchup problem, are presented and discussed.
Year
DOI
Venue
1985
10.1109/TCAD.1985.1270142
IEEE Trans. on CAD of Integrated Circuits and Systems
Keywords
Field
DocType
data structure,nonlinear equations,very large scale integration,partial differential equation,numerical simulation,newton method,direct method,field effect transistor,nonlinear equation,boltzmann transport equation,data structures,numerical method,newton iteration,transient response,monte carlo method
Nonlinear system,Direct methods,Iterative method,Matrix (mathematics),Electronic engineering,Numerical analysis,Very-large-scale integration,Integrated circuit,Partial differential equation,Physics
Journal
Volume
Issue
ISSN
4
4
0278-0070
Citations 
PageRank 
References 
27
2.94
1
Authors
6
Name
Order
Citations
PageRank
Randolph E. Bank1628.71
W. M. Coughran, Jr.2498.27
Wolfgang Fichtner3273.61
Eric Grosse4272.94
Donald J. Rose5717254.98
R. Kent Smith6586.39