Name
Abstract | ||
|---|---|---|
This paper presents a k-band (18-26.5 GHz) high gain low noise amplifier (LNA) in 65-nm CMOS mixed signal process. The LNA has a peak gain of 20.46 dB at 22.45 GHz and a -3 dB bandwidth of 3.8 GHz. S11 of the chip is better than -11 dB and S22 better than -15 dB across the band. The measured smallest noise figure (NF) is 3.4 dB. The whole chip consumes 11mA current under 1.1V supply voltage and occupies an area of 710 μm × 540 μm. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/ISCAS.2013.6572048 | ISCAS |
Keywords | Field | DocType |
field effect mmic,cmos analogue integrated circuits,current 11 ma,bandwidth 3 ghz,noise figure 3.4 db,low noise amplifiers,size 65 nm,cmos mixed signal process,k-band high-gain lna,gain 20.46 db,cmos technology,mixed analogue-digital integrated circuits,voltage 1.1 v,mmic amplifiers,frequency 18 ghz to 26.5 ghz,inductors,noise,cmos integrated circuits,noise measurement,k band,transistors | K band,Low-noise amplifier,Computer science,Voltage,Noise figure,CMOS,Electronic engineering,Chip,Bandwidth (signal processing),Mixed-signal integrated circuit,Electrical engineering | Conference |
Volume | Issue | ISSN |
null | null | 0271-4302 |
ISBN | Citations | PageRank |
978-1-4673-5760-9 | 0 | 0.34 |
References | Authors | |
3 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jianfei Xu | 1 | 4 | 1.28 |
| Yan Na | 2 | 12 | 9.20 |
| Qiang Chen | 3 | 0 | 0.34 |
| Jianjun Gao | 4 | 51 | 11.33 |
| Xiaoyang Zeng | 5 | 442 | 107.26 |