Name
Title | ||
|---|---|---|
A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion |
Abstract | ||
|---|---|---|
We show results of a self-consistent large-signal electro-thermal GaN HEMT model that includes trap-related and self-heating dispersion effects. Both self-heating and trap dynamics are treated with a strictly physical approach that makes it easier to link the model parameter with the physical HEMT structure and material characteristics. The model, implemented in ADS, is applied to measured DC data taken at ambient temperatures between 200K and 400K, with excellent results. Several examples are given of dynamic HEMT simulation, showing the co-existence and the interaction of temperature- and trap-related dispersive effects. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1016/j.microrel.2010.09.025 | Microelectronics Reliability |
Keywords | Field | DocType |
ambient temperature | Self heating,Dispersion (optics),Electronic engineering,Large-signal model,Engineering,High-electron-mobility transistor,Optoelectronics,Model parameter | Journal |
Volume | Issue | ISSN |
51 | 2 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| D. Mari | 1 | 0 | 0.34 |
| M. Bernardoni | 2 | 17 | 5.69 |
| Giovanna Sozzi | 3 | 0 | 1.01 |
| R. Menozzi | 4 | 27 | 10.26 |
| G.A. Umana-Membreno | 5 | 0 | 0.34 |
| B.D. Nener | 6 | 0 | 0.34 |