Paper Info
Title
High-Voltage Tolerant Digitally Aided DCM/PWM Multiphase DC-DC Boost Converter With Integrated Schottky Diodes in 0.13 µm 1.2 V Digital CMOS Process
Abstract
This paper reports a high-frequency DC-DC boost converter capable of sustaining up to 4× the rated process voltage using high-voltage devices fabricated in standard 0.13 μm 1.2 V CMOS without additional masking steps. Integrated Schottky Barrier Diodes (SBD) and high-voltage stacked composite NMOS switches enable processing of large voltages in a 100 MHz digitally assisted four-phase switched inductor (SI) boost converter architecture. A high-frequency digital delay-locked loop (DDLL) is employed to automatically stagger and synchronize each phase to a primary current-mode pulsed-width modulator (PWM) controller, thus eliminating the need for multiple current sensing circuits. The converter operates in discontinuous conduction mode (DCM) and utilizes integrated Schottky diode output rectifier stages to eliminate dead-time controllers and power hungry high side drivers. The converter operates at 100 MHz with four external 22 nH inductors and achieves an output conversion range of 3 V to 5 V from a 1.2 V input supply. It can deliver 240 mW at 3 V and 200 mW at 5 V with an efficiency of 60%, and ~ 180 mW at 3 V with peak efficiency of 64%.
Year
DOI
Venue
2013
10.1109/JSSC.2013.2237699
Solid-State Circuits, IEEE Journal of
Keywords
Field
DocType
CMOS digital integrated circuits,DC-DC power convertors,PWM power convertors,Schottky diodes,delay lock loops,electric current control,SBD,current sensing circuits,current-mode PWM controller,current-mode pulsed-width modulator controller,dead-time controllers,discontinuous conduction mode,efficiency 60 percent,efficiency 64 percent,four-phase switched inductor boost converter architecture,frequency 100 Hz,high-frequency DC-DC boost converter,high-frequency DDLL,high-frequency digital delay-locked loop,high-voltage devices,high-voltage stacked composite NMOS switches,high-voltage tolerant digitally-aided DCM-PWM multiphase DC-DC boost converter,integrated Schottky barrier diodes,power 200 mW,power 240 mW,power-hungry high-side drivers,size 0.13 mum,standard CMOS,voltage 1.2 V,voltage 3 V to 5 V,CMOS,DC-DC step-up converter,Schottky diodes,delay locked loop,switched-mode
Boost converter,Rectifier,NMOS logic,Computer science,Diode,CMOS,Electronic engineering,Schottky diode,Power electronics,High voltage,Electrical engineering
Journal
Volume
Issue
ISSN
48
3
0018-9200
Citations 
PageRank 
References 
0
0.34
0
Authors
5
Name
Order
Citations
PageRank
Deepak Bhatia1142.62
Lin Xue2326.52
Pengfei Li38211.81
Qiu-zhong Wu400.68
Rizwan Bashirullah520042.61