Name
Abstract | ||
|---|---|---|
Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequencies, with advantages in design complexity, functionality and cost compared to III-Vs. The potential for application of deep submicron SiGe-BiCMOS and CMOS-SOI technologies in mm-wave systems is surveyed in this paper. Progress in mm-wave silicon IC development for Gbit/s data rate wireless communication is highlighted with emphasis on recently reported innovations and developments from the authors' own work. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1109/ICECS.2009.5410816 | Yasmine Hammamet |
Keywords | Field | DocType |
BiCMOS integrated circuits,CMOS integrated circuits,Ge-Si alloys,millimetre wave integrated circuits,silicon-on-insulator,BiCMOS,CMOS-SOI,SiGe,millimeter-wave technologies | Silicon on insulator,Gigabit,Extremely high frequency,Wireless,System on a chip,Computer science,CMOS,Electronic engineering,Electronic circuit,Electrical engineering,Silicon | Conference |
ISBN | Citations | PageRank |
978-1-4244-5090-9 | 0 | 0.34 |
References | Authors | |
3 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| John R. Long | 1 | 336 | 50.48 |
| Zhao, Y. | 2 | 7 | 1.62 |
| Wei L. Chan | 3 | 58 | 9.78 |
| Ka Chun Kwok | 4 | 29 | 4.61 |
| Yanyu Jin | 5 | 10 | 3.35 |
| Dixian Zhao | 6 | 119 | 18.35 |