Name
Title | ||
|---|---|---|
High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35µm CMOS process |
Abstract | ||
|---|---|---|
This work presents the design of LDMOS transistors fully compatible with a standard CMOS process, only requiring mask layout manipulation. A conventional 0.35@mm CMOS process was elected to demonstrate the viability of the approach. The prototyped LDMOS transistor exhibits a breakdown voltage of 24V, which represents an improvement of 31% when compared with the high-voltage extended-drain NMOS available in the process library, while other static parameters remain in the same range. Furthermore, this solution enables the CMOS integration of a high-voltage pass-transistor, as a consequence of the formation of an isolated lightly doped p-type region inside the n-well. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1016/j.mejo.2006.09.015 | Microelectronics Journal |
Keywords | Field | DocType |
cmos integration,mask layout manipulation,high-voltage pass-transistor,breakdown voltage,prototyped ldmos transistor,doped p-type region,process library,standard cmos process,ldmos transistor,high-voltage ldmos transistor,mm cmos process,high voltage,ldmos | LDMOS,NMOS logic,Electronic engineering,Breakdown voltage,CMOS,Engineering,Miniaturization,High voltage,MOSFET,Transistor,Electrical engineering | Journal |
Volume | Issue | ISSN |
38 | 1 | Microelectronics Journal |
Citations | PageRank | References |
1 | 0.39 | 1 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| P. M. Santos | 1 | 1 | 0.39 |
| Vitor Costa | 2 | 27 | 4.27 |
| M. C. Gomes | 3 | 1 | 0.39 |
| Beatriz Borges | 4 | 3 | 2.48 |
| Mário Lança | 5 | 2 | 2.08 |