Name
Abstract | ||
|---|---|---|
Performance of p-HEMT depends on quantization conditions of electron flow along the device channel. Varying shape of the quantum well (QW) and set of available electron energy levels were calculated using the matrix method. The degree of asymmetry of QW with finite walls was controlled by gate and drain biases. The tailoring of electrical field in dual gate p-HEMTs provided better confinement and reduced the energy of available levels. The probability density functions indicated possible spread out of electrons at the front and the back of the gate to the conducting layers above the channel. Electrons run away to the substrate show similar tendency around the gate. We found that electrons tend to occupy mostly low energy level about 30meV, although higher energies of about 180 and 300meV are available. Clearly, scattering mechanism reduces the energy of electrons decreasing the electron mobility. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1016/j.mejo.2008.11.049 | Microelectronics Journal |
Keywords | Field | DocType |
device channel,varying shape,dual gate p-hemts,low energy level,better confinement,higher energy,electron flow,available level,p-hemt channel,available electron energy level,variable quantum,electron mobility,energy levels,quantum well,current density,probability density function,electric field | Current density,Energy level,Electronic engineering,Scattering,Engineering,High-electron-mobility transistor,Quantum Hall effect,Quantum well,Condensed matter physics,Electron mobility,Electron | Journal |
Volume | Issue | ISSN |
40 | 4-5 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| S. Mil'shtein | 1 | 7 | 5.39 |
| A. Churi | 2 | 1 | 1.09 |