Name
Abstract | ||
|---|---|---|
Summary An improvement of monolithically integrated photodiodes in a p-type substrate of a commercial high-speed 0.35 µm SiGe heterojunction
transistor (HBT) BiCMOS technology, with a supply voltage of 5 V, is presented. The detectors combine low capacitance with
high bandwidth and responsivity which are realized with only slight process modifications with negligible influence on the
transistor parameters. We achieve a speed improvement which results, e.g., in a bandwidth of 475 MHz and a responsivity of
0.17 A/W at blue light and a reverse bias voltage of 4 V. These detectors are designed to be applicable over the wide spectrum
of technologically significant optical carrier wavelengths from near-infrared to blue and ultraviolet.
|
Year | DOI | Venue |
|---|---|---|
2008 | 10.1007/s00502-008-0516-1 | Elektrotechnik und Informationstechnik |
Keywords | DocType | Volume |
bicmos,oeic,monolithic,pin,photodiode | Journal | 125 |
Issue | ISSN | Citations |
3 | 1613-7620 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Marchlewski | 1 | 0 | 0.34 |
| Kerstin Schneider-Hornstein | 2 | 10 | 3.55 |
| H. Zimmermann | 3 | 57 | 15.95 |