Paper Info
Title
RF front-end of direct conversion receiver RFIC for cdma-2000
Abstract
We report on the front-end of a highly integrated dual-band direct-conversion receiver IC for cdma-2000 mobile handset applications. The RF front-end included a CELL-band low-noise amplifier (LNA), dual-band direct-conversion quadrature I/Q down-converters, and a local-oscillator (LO) signal generation circuit. At 2.7 V, the LNA had a noise figure of 1.2 dB and input third-order intermodulation product (IIP3) of 9 dBm. I/Q down-converters had a noise figure of 4-5 dB and IIP3 of 4-5 dBm and IIP2 of 55 dBm. An on-chip phase-locked loop and external voltage-controlled oscillator generated the LO signal. The receiver RFIC was implemented in a 0.35-μm SiGe BiCMOS process and meets or exceeds all cdma-2000 requirements when tested individually or on a handset.
Year
DOI
Venue
2004
10.1109/JSSC.2004.833551
Solid-State Circuits, IEEE Journal of
Keywords
DocType
Volume
3G mobile communication,BiCMOS integrated circuits,Ge-Si alloys,MMIC,UHF integrated circuits,code division multiple access,convertors,integrated circuit design,mobile handsets,phase locked loops,radio receivers,signal generators,voltage-controlled oscillators,0.35 micron,1.2 dB,2.7 V,CELL-band low-noise amplifier,LO signal generation,RF front-end,SiGe,SiGe BiCMOS process,cdma-2000 requirements,direct-conversion I/Q down-converter,dual-band direct-conversion receiver IC,external voltage-controlled oscillator,input third-order intermodulation product,local-oscillator signal generation circuit,mobile handset,on-chip phase-locked loop,quadrature I/Q down-converter,receiver RFIC
Journal
39
Issue
ISSN
Citations 
10
0018-9200
3
PageRank 
References 
Authors
0.52
6
9
Name
Order
Citations
PageRank
Hafizi, M.130.52
Shen Feng230.52
Taoling Fu330.86
Schulze, K.430.52
R. Ruth530.86
R. Schwab630.52
P. Karlsen730.86
D. Simmonds830.52
Qizheng Gu971.15