Name
Title | ||
|---|---|---|
InP DHBT circuits: From device physics to 40Gb-s and 100Gb-s transmission system experiments |
Abstract | ||
|---|---|---|
The capacity of fiber-optic telecommunication systems can be increased by higher data rate signaling. We present key analog and digital circuits which find application as building blocks in future very high data rate systems. The circuits are fabricated in our indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The physical properties of the InP material system, notably high breakdown and high electron mobility, enable functions that are not accessible with current silicon-based high-speed technologies, including SiGe. Device and circuit results are presented, and we report on transmission system experiments conducted with these InP DHBT circuits. © 2009 Alcatel-Lucent. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1002/bltj.v14:3 | Bell Labs Technical Journal |
DocType | Volume | Issue |
Journal | 14 | 3 |
Citations | PageRank | References |
3 | 0.62 | 1 |
Authors | ||
17 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nils Weimann | 1 | 3 | 0.62 |
| Vincent Houtsma | 2 | 12 | 7.06 |
| Rose Kopf | 3 | 3 | 2.98 |
| Yves Baeyens | 4 | 23 | 4.19 |
| Joseph Weiner | 5 | 10 | 3.04 |
| Alaric Tate | 6 | 3 | 0.95 |
| John Frackoviak | 7 | 3 | 0.62 |
| Young-Kai Chen | 8 | 70 | 16.40 |
| Gregory Raybon | 9 | 4 | 1.36 |
| Jean Godin | 10 | 5 | 2.61 |
| Muriel Riet | 11 | 5 | 3.96 |
| Virginie Nodjiadjim | 12 | 7 | 4.33 |
| Agnieszka Konczykowska | 13 | 8 | 5.15 |
| Jean-Yves Dupuy | 14 | 13 | 5.20 |
| Filipe Jorge | 15 | 9 | 5.11 |
| André Scavennec | 16 | 3 | 0.95 |
| Gabriel Charlet | 17 | 14 | 6.42 |