Abstract | ||
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Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36eV have been revealed in studied samples. The 0.90–0.98eV PL bands are attributed to the band tail luminescence in Si nano crystallites with the size of 15–20 nm. Concurrently, the 1.18 and 1.36eV PL bands are connected, apparently, with radiative transition between quantum confined levels within Si QDs (size of 5–6nm) embedded into a-Si matrix. |
Year | DOI | Venue |
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2005 | 10.1016/j.mejo.2005.02.065 | Microelectronics Journal |
Keywords | Field | DocType |
Si QD luminescence,Band tail luminescence,Amorphous Si | Analytical chemistry,Crystallite,Crystal,Optics,Luminescence,Amorphous silicon,Raman scattering,Engineering,Condensed matter physics,Silicon,Photoluminescence,Amorphous solid | Journal |
Volume | Issue | ISSN |
36 | 3 | 0026-2692 |
Citations | PageRank | References |
1 | 0.51 | 0 |
Authors | ||
7 |
Name | Order | Citations | PageRank |
---|---|---|---|
A. Vivas Hernandez | 1 | 1 | 0.51 |
T.V. Torchynska | 2 | 1 | 2.88 |
Y. Matsumoto | 3 | 1 | 0.51 |
S. Jimenez Sandoval | 4 | 1 | 0.51 |
M. Dybiec | 5 | 1 | 0.51 |
S. Ostapenko | 6 | 1 | 0.85 |
L.V. Shcherbina | 7 | 1 | 0.51 |