Name
Title | ||
|---|---|---|
One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects |
Abstract | ||
|---|---|---|
We have been studying on subthreshold characteristics of SOI MOSFETs in terms of substrate bias dependence, using a 1-D Poisson equation on an SOI multi-layer structure for estimating structural parameters of real devices [1], Here, we consider quantum mechanical effects in the electron inversion layer of thin SOI MOSFETs, implementing a self-consistent solver of Poisson and Schrodinger equations in a 1-D subthreshold simulator. From results of simulations, we have concluded that quantum mechanical effects need to be considered in analizing thin SOI devices. |
Year | DOI | Venue |
|---|---|---|
1998 | 10.1155/1998/23890 | VLSI DESIGN |
Keywords | DocType | Volume |
SOI MOSFET,device simulation,subthreshold characteristics,quantum mechanical effects,parameter fitting,substrate bias | Journal | 6 |
Issue | ISSN | Citations |
1-4 | 1065-514X | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Rimon Ikeno | 1 | 8 | 3.29 |
| Hiroshi Ito | 2 | 0 | 0.34 |
| kunihiro asada | 3 | 273 | 78.26 |