Name
Title | ||
|---|---|---|
A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/ISSCC.2007.373500 | ISSCC |
Keywords | Field | DocType |
leakage current,cmos integrated circuits,embedded systems,charge transfer,16 bit,phase change memory | Phase-change memory,Leakage (electronics),Access time,Computer science,Resistive touchscreen,16-bit,Voltage,CMOS,Electronic engineering,Throughput,Electrical engineering | Conference |
Citations | PageRank | References |
19 | 5.17 | 1 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Satoru Hanzawa | 1 | 19 | 6.53 |
| Naoki Kitai | 2 | 21 | 5.90 |
| Kenichi Osada | 3 | 52 | 10.80 |
| Akira Kotabe | 4 | 37 | 9.67 |
| Yuichi Matsui | 5 | 19 | 5.17 |
| Nozomu Matsuzaki | 6 | 19 | 5.17 |
| Norikatsu Takaura | 7 | 19 | 5.17 |
| Masahiro Moniwa | 8 | 19 | 5.17 |
| Takayuki Kawahara | 9 | 318 | 103.32 |