Title
Terahertz Emission And Detection By Plasma Waves In Nanometer Size Field Effect Transistors
Abstract
Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GaInAs and GaN HEMTs.
Year
DOI
Venue
2006
10.1093/ietele/e89-c.7.926
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
plasma oscillations, field effect transistors, detection and emission of THz radiation
Liquid helium,Field-effect transistor,Optics,Electronic engineering,Terahertz radiation,Plasma,Plasma oscillation,High-electron-mobility transistor,MOSFET,Electromagnetic radiation,Optoelectronics,Physics
Journal
Volume
Issue
ISSN
E89C
7
1745-1353
Citations 
PageRank 
References 
0
0.34
0
Authors
5
Name
Order
Citations
PageRank
Wojciech Knap13610.83
Jerzy Lusakowski242.08
Frederic Teppe301.01
Nina Dyakonova421.59
Abdelouahad El Fatimy500.34