Title | ||
---|---|---|
An Analytic Expression of Thermal Diffusion Coefficient for the Hydrodynamic Simulation of Semiconductor Devices |
Abstract | ||
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A new analytical expression of thermal diffusion coefficient D T is derived. To the first-order approximation, it is given by (1+eta)(-1)(D/T-n) rather than (1-eta)(D/T-n) where eta = -(T-n/mu*)(partial derivativemu*/partial derivativeT(n)) and mu* represents the temperature-dependent bulk mobility, This new transport coefficient is implemented in our 2-D hydrodynamic device simulator and it seems to produce more reasonable results. |
Year | DOI | Venue |
---|---|---|
2001 | 10.1155/2001/51736 | VLSI DESIGN |
Keywords | Field | DocType |
hydrodynamic simulation,thermal diffusion coefficient,effective carrier energy,non-local mobility model | Statistical physics,Current density,Boltzmann equation,Monte Carlo method,Atomic physics,MOSFET,Semiconductor device,Thermal diffusivity,Condensed matter physics,Dimensionless quantity,Physics,Lambda | Journal |
Volume | Issue | ISSN |
13 | SP1-4 | 1065-514X |
Citations | PageRank | References |
1 | 0.51 | 0 |
Authors | ||
4 |
Name | Order | Citations | PageRank |
---|---|---|---|
Ting-Wei Tang | 1 | 9 | 2.77 |
Xinlin Wang | 2 | 8 | 2.33 |
Hai-Tao Gan | 3 | 96 | 15.71 |
Meikei Ieong | 4 | 21 | 7.23 |