Title
An Analytic Expression of Thermal Diffusion Coefficient for the Hydrodynamic Simulation of Semiconductor Devices
Abstract
A new analytical expression of thermal diffusion coefficient D T is derived. To the first-order approximation, it is given by (1+eta)(-1)(D/T-n) rather than (1-eta)(D/T-n) where eta = -(T-n/mu*)(partial derivativemu*/partial derivativeT(n)) and mu* represents the temperature-dependent bulk mobility, This new transport coefficient is implemented in our 2-D hydrodynamic device simulator and it seems to produce more reasonable results.
Year
DOI
Venue
2001
10.1155/2001/51736
VLSI DESIGN
Keywords
Field
DocType
hydrodynamic simulation,thermal diffusion coefficient,effective carrier energy,non-local mobility model
Statistical physics,Current density,Boltzmann equation,Monte Carlo method,Atomic physics,MOSFET,Semiconductor device,Thermal diffusivity,Condensed matter physics,Dimensionless quantity,Physics,Lambda
Journal
Volume
Issue
ISSN
13
SP1-4
1065-514X
Citations 
PageRank 
References 
1
0.51
0
Authors
4
Name
Order
Citations
PageRank
Ting-Wei Tang192.77
Xinlin Wang282.33
Hai-Tao Gan39615.71
Meikei Ieong4217.23