Paper Info
Title
Numerical simulation of CZTS thin film solar cell.
Abstract
The performance of CZTS (Cu 2ZnSnS 4) thin film solar cell is numerically simulated in this paper. The influences of structural and physical parameters are studied, including thickness, carrier density and defect density of CZTS absorber, thickness of CdS buffer layer. It can be found in the simulation results that to reach high conversion efficiency, the cell should have a thin buffer layer and a thick absorber layer. It is necessary to control the defect density in the absorber one order lower than carrier density. The effect of operating temperature on the cell performance shows that increased temperature will strongly affect the efficiency. The presence of low band gap interfacial layer between CZTS absorber and Mo back contact may lower the open circuit voltage. © 2012 IEEE.
Year
DOI
Venue
2012
10.1109/NEMS.2012.6196826
NEMS
Keywords
DocType
Volume
amps-1d,czts solar cell,numerical simulation,carrier density,numerical analysis,band gap,zinc oxide,open circuit voltage,conversion efficiency,thin film solar cell
Conference
null
Issue
Citations 
PageRank 
null
0
0.34
References 
Authors
0
3
Name
Order
Citations
PageRank
Wenhao Zhao100.34
Wenli Zhou212.32
X. S. Miao323.06