Name
Title | ||
|---|---|---|
Suppression Of Current Collapse Of High-Voltage Algan/Gan Hfets On Si Substrates By Utilizing A Graded Field-Plate Structure |
Abstract | ||
|---|---|---|
Current collapse of AlGaN/GaN heterostructure field-effect transistors (HFETs) formed on qualified epitaxial layers on Si substrates was successfully suppressed using graded field-plate (FP) structures. To improve the reproducibility of the FP structure manufacturing process, a simple process for linearly graded SiO2 profile formation was developed. An HFET with a graded FP structure exhibited a significant decrease in an on-resistance increase ratio of 1.16 even after application of a drain bias of 600 V. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/transele.E95.C.1343 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | DocType | Volume |
AlGaN/GaN HFETs, current collapse, field plate, on-resistance | Journal | E95C |
Issue | ISSN | Citations |
8 | 0916-8524 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Tadayoshi Deguchi | 1 | 0 | 0.34 |
| Hideshi Tomita | 2 | 0 | 0.34 |
| Atsushi Kamada | 3 | 0 | 0.34 |
| Manabu Arai | 4 | 0 | 0.68 |
| K. Yamasaki | 5 | 2 | 0.97 |
| Takashi Egawa | 6 | 13 | 3.98 |