A 19 nm 112.8 mm 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

Paper Info

Title
A 19 nm 112.8 mm 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

Abstract
A 64 Gb MLC NAND flash memory in 19 nm CMOS technology has been developed. By adopting one-sided all bit line (ABL) architecture, the single cell array configuration, bit line bias acceleration (BLBA) and BC states first program algorithm, the smallest 64 Gb die size in 2 bit/cell is achieved with high performance of 15 MB/s program throughput. Program suspend and erase suspend functions are introduced to improve the read latency. High speed toggle mode interface of 400 Mbit/sec/pin at VCCQ = 1.8 V is also realized.

Year	DOI	Venue
2013	10.1109/JSSC.2012.2215094	IEEE Journal of Solid-state Circuits
Keywords	DocType	Volume
single cell array configuration,resume,program suspend functions,ABL architecture,bit line bias acceleration,NAND flash memory,suspend,bit rate 15 Mbit/s,voltage 1.8 V,high-speed interface,erase suspend functions,size 19 nm,CMOS technology,cell-to-cell coupling effect,one-sided all bit line architecture,read latency,BLBA,multilevel flash memory,CMOS digital integrated circuits,program throughput,all bit line(ABL) architecture,MLC NAND flash memory,Vth distribution,flash memories,toggle mode interface,BC state first program	Journal	48
Issue	ISSN	Citations
1	0018-9200	2
PageRank	References	Authors
0.44	0	32

Authors (32 rows)

Cited by (2 rows)

References (0 rows)

Name	Order	Citations	PageRank
Kazushige Kanda	1	11	8.46
Noboru Shibata	2	8	2.24
Toshiki Hisada	3	6	2.33
Katsuaki Isobe	4	6	1.20
Manabu Sato	5	3	1.80
Yui Shimizu	6	2	0.78
Takahiro Shimizu	7	4	1.82
Takahiro Sugimoto	8	3	1.47
Tomohiro Kobayashi	9	2	0.78
Naoaki Kanagawa	10	2	1.12
Yasuyuki Kajitani	11	2	0.78
Takeshi Ogawa	12	2	1.12
Kiyoaki Iwasa	13	2	0.78
Masatsugu Kojima	14	6	2.67
Toshihiro Suzuki	15	2	0.44
Yuya Suzuki	16	77	7.45
Shintaro Sakai	17	2	0.78
Tomofumi Fujimura	18	2	1.45
Yuko Utsunomiya	19	4	1.16
Toshifumi Hashimoto	20	3	1.47
Naoki Kobayashi	21	129	33.47
Yuuki Matsumoto	22	2	1.12
Satoshi Inoue	23	2	0.78
Yoshinao Suzuki	24	2	1.45
Yasuhiko Honda	25	2	0.78
Yosuke Kato	26	13	3.71
Shingo Zaitsu	27	4	1.16
Hardwell Chibvongodze	28	6	1.56
Mitsuyuki Watanabe	29	16	3.73
Hong Ding	30	3	2.57
Naoki Ookuma	31	4	1.16
Ryuji Yamashita	32	2	1.12