Name
Abstract | ||
|---|---|---|
The ferroelectric memory (FeRAM) has a great advantage for system on a chip, since FeRAM not only supports non-volatility but also delivers a fast memory access similar to that of DRAM. To enhance the applicability of FeRAM for embedded reconfigurable hardware, three circuit technologies are discussed in this paper. Simulation and measurement data confirmed that both power consumption and memory area can be substantially reduced, making FeRAM the most promising new technology for implementing high-performance, low-power reconfigurable hardware. |
Year | DOI | Venue |
|---|---|---|
1999 | 10.1109/EH.1999.785453 | Evolvable Hardware |
Keywords | Field | DocType |
measurement data,feram circuit technology,embedded reconfigurable hardware,low-power reconfigurable hardware,promising new technology,great advantage,memory area,circuit technology,fast memory access,power consumption,ferroelectric memory,ferroelectric materials,real time systems,system on chip,hardware,system on a chip,nonvolatile memory,reconfigurable hardware | Dram,Semiconductor memory,System on a chip,Non-volatile random-access memory,Non-volatile memory,Engineering,Ferroelectric RAM,Computer hardware,Computer memory,Embedded system,Reconfigurable computing | Conference |
ISBN | Citations | PageRank |
0-7695-0256-3 | 0 | 0.34 |
References | Authors | |
2 | 9 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| K. Asari | 1 | 0 | 0.34 |
| Y. Mitsuyama | 2 | 0 | 0.34 |
| T. Onoye | 3 | 37 | 10.36 |
| I. Shirakawa | 4 | 0 | 0.34 |
| H. Hirano | 5 | 0 | 0.34 |
| T. Honda | 6 | 0 | 0.34 |
| T. Otsuki | 7 | 0 | 0.34 |
| T. Baba | 8 | 0 | 0.34 |
| T. Meng | 9 | 0 | 0.34 |