Name
Title | ||
|---|---|---|
Fullband Simulation Of Nano-Scale Mosfets Based On A Non-Equilibrium Green'S Function Method |
Abstract | ||
|---|---|---|
The analysis of multiband quantum transport simulation in double-gate metal oxide semiconductor field effects transistors (DG-MOSFETs) is performed based on a non-equilibrium Green's function (NEGF) formalism coupled self-consistently with the Poisson equation. The empirical sp(3)s. tight binding approximation (TBA) with nearest neighbor coupling is employed to obtain a realistic multiband structure. The effects of non-parabolic bandstructure as well as anisotropic features of Si are studied and analyzed. As a result, it is found that the multiband simulation results on potential and current profiles show significant differences, especially in higher applied bias, from those of conventional effective mass model. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1093/ietele/e91-c.1.105 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
non-equilibrium Green's function, quantum transport, tight-binding approximation, sp(3)s*, double-gate MOSFETs, Poisson's equation | k-nearest neighbors algorithm,Nanoelectronics,Tight binding,Green's function,Poisson's equation,Electronic band structure,Effective mass (solid-state physics),Electronic engineering,Engineering,MOSFET | Journal |
Volume | Issue | ISSN |
E91C | 1 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Helmy Fitriawan | 1 | 0 | 0.34 |
| Matsuto Ogawa | 2 | 0 | 1.35 |
| Satofumi Souma | 3 | 0 | 1.01 |
| Tanroku Miyoshi | 4 | 0 | 1.01 |