Name
Abstract | ||
|---|---|---|
This tutorial is intended to graduate students specialized in microelectronics formation. This training allows the students to fabricate a simple but original device. A thin film transistor for which the active layer is made of silicon-germanium alloy has been fabricated and electrically characterized. This experiment allowed the student to work on several types of process steps and to evaluate the role of the active layer on the electrical characteristics of a transistor. |
Year | DOI | Venue |
|---|---|---|
1999 | 10.1109/MSE.1999.787042 | Arlington, VA |
Keywords | Field | DocType |
original device,graduate student,electrical characteristic,process step,thin film transistor,student realization,silicon-germanium alloy,active layer,silicon-germanium thin film transistors,microelectronics formation,clean rooms,cleanroom,lpcvd,lithography,flowcharts,photonic band gap,temperature,thin film transistors | Engineering physics,Computer architecture,Active layer,Thin-film transistor,Microelectronics,Cleanroom,Electronic engineering,Lithography,Engineering,Transistor,Silicon-germanium,Chemical vapor deposition | Conference |
ISBN | Citations | PageRank |
0-7695-0312-8 | 0 | 0.34 |
References | Authors | |
0 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| D. Guillet | 1 | 0 | 0.34 |
| Karine Mourgues | 2 | 46 | 7.83 |
| R. Rogel | 3 | 0 | 0.68 |
| H. Lhermite | 4 | 0 | 0.68 |
| O. Bonnaud | 5 | 13 | 9.82 |