Paper Info
Title
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes
Abstract
The electrical and dielectric properties of Au/PVA (Ni,Zn-doped)/n-Si Schottky diodes (SDs) were studied in the temperature range of 80–400K. The investigation of various SDs fabricated with different types of interfacial layer is important for understanding the electrical and dielectric properties of SDs. Therefore, in this study polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The electrical and dielectric properties of Au/PVA (Ni,Zn-doped)/n-Si SDs were calculated from the capacitance–voltage (C–V) and conductance–voltage (G/w–V) measurements. The effects of interface state density (Nss) and series resistance (Rs) on C–V characteristics were investigated in the wide temperature range. It was found that both of the C–V–T and G/w–V–T curves included two abnormal regions and one intersection point. The dielectric constant (ε″), dielectric loss (ε″), dielectric loss tangent (tanδ) and the ac electrical conductivity (σac) obtained from the measured capacitance and conductance were studied for Au/PVA (Ni,Zn-doped)/n-Si SDs. Experimental results show that the values of ε′, ε″ and tanδ are a strong function of the temperature. Also, the results indicate the interfacial polarization can be more easily occurred at high temperatures.
Year
DOI
Venue
2010
10.1016/j.microrel.2009.09.005
Microelectronics Reliability
Keywords
Field
DocType
schottky diode,dielectric properties,dielectric constant,dielectric loss,series resistance,electric conductivity
Extrinsic semiconductor,Permittivity,Atmospheric temperature range,Dielectric loss,Dielectric,Doping,Chemistry,Electronic engineering,Conductance,Electrical resistivity and conductivity
Journal
Volume
Issue
ISSN
50
1
0026-2714
Citations 
PageRank 
References 
2
0.72
0
Authors
4
Name
Order
Citations
PageRank
İlbilge Dökme141.95
Ş. Altındal243.03
T. Tunç320.72
İ. Uslu420.72