Name
Title | ||
|---|---|---|
A Low-Voltage 1 Mb FRAM in 0.13 µm CMOS Featuring Time-to-Digital Sensing for Expanded Operating Margin. |
Abstract | ||
|---|---|---|
In the effort to achieve low access energy non-volatile memory, challenges are encountered in sensing data at low power supply voltage. This work presents the design of a ferroelectric random access memory (FRAM) as a promising candidate for this need. The challenges of sensing diminishingly small charge and developing circuits compatible with the scaling of FRAM technology to low voltage and more... |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1109/JSSC.2011.2164732 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Nonvolatile memory,Random access memory,Delay,Ferroelectric films,Sensors,Capacitors,Hysteresis | Journal | 47 |
Issue | ISSN | Citations |
1 | 0018-9200 | 4 |
PageRank | References | Authors |
0.54 | 7 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Masood Qazi | 1 | 115 | 9.10 |
| Michael Clinton | 2 | 44 | 9.26 |
| Steven Bartling | 3 | 17 | 3.22 |
| Anantha P. Chandrakasan | 4 | 14442 | 1946.93 |