Name
Abstract | ||
|---|---|---|
We present a novel bulk semiconductor pressure sensor based on an Al/sub x/Ga/sub 1-x/As/GaAs resonant tunneling diode (RTD) with a frequency output. A relaxation oscillator is obtained with the RTD biased in the negative differential resistance (NDR) region. Pressure applied to the RTD changes the frequency of oscillation due to the shift in current-voltage characteristics. Frequency measurements... |
Year | DOI | Venue |
|---|---|---|
1999 | 10.1109/19.816157 | IEEE Transactions on Instrumentation and Measurement |
Keywords | Field | DocType |
Gallium arsenide,Resonance,Oscillators,Current-voltage characteristics,Sensor phenomena and characterization,Resonant tunneling devices,Semiconductor diodes,Frequency measurement,Performance evaluation,Electrical resistance measurement | Quantum tunnelling,Gallium arsenide,Oscillation,Relaxation oscillator,Diode,Electronic engineering,Pressure sensor,Resonance,Resonant-tunneling diode,Mathematics | Journal |
Volume | Issue | ISSN |
48 | 6 | 0018-9456 |
Citations | PageRank | References |
2 | 1.33 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kabula Mutamba | 1 | 2 | 2.01 |
| M. Flath | 2 | 2 | 1.33 |
| A. Sigurdardottir | 3 | 2 | 1.33 |
| A. Vogt | 4 | 2 | 1.33 |
| H. L. Hartnagel | 5 | 2 | 1.33 |