Abstract | ||
---|---|---|
A technique based on the use of Floating Gate MOS (FGMOS) transistors is proposed to improve the continuous tuning of CMOS transconductors. It can be applied to tuning circuits based on resistive current division, and allows significantly improving the linearity and input and output range the transconductor. Measurement results of a test chip prototype show an increase in IM3 of 13 dB for two input tones of 1Vpp, 950 kHz and 1050 kHz. |
Year | DOI | Venue |
---|---|---|
2013 | 10.1109/ISCAS.2013.6572089 | Circuits and Systems |
Keywords | Field | DocType |
CMOS analogue integrated circuits,MOSFET,circuit tuning,operational amplifiers,CMOS transconductor,FGMOS transistors,continuous tuning,floating gate MOS transistors,frequency 1050 kHz,frequency 950 kHz,linearity improvement,resistive current division,tuning circuits,voltage 1 V | Current divider,Computer science,Resistive touchscreen,Control theory,Chip,CMOS,Electronic engineering,Input/output,Electronic circuit,Transistor,Electrical engineering,Operational amplifier | Conference |
ISSN | ISBN | Citations |
0271-4302 | 978-1-4673-5760-9 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
---|---|---|---|
José M. Algueta Miguel | 1 | 24 | 6.57 |
Antonio J. López-martín | 2 | 163 | 47.60 |
Jaime Ramírez-angulo | 3 | 223 | 71.68 |
Ramón González Carvajal | 4 | 681 | 153.63 |
Algueta, J.M. | 5 | 0 | 0.34 |
A. J. López-Martín | 6 | 66 | 12.77 |
Ramirez-Angulo, J. | 7 | 0 | 0.34 |