Paper Info
Title
Quantum corrections: a multilevel solver for the density-gradient equation
Abstract
Miniaturisation of integrated circuits continues to shrink device lengths to such an extent that quantum tunnelling and confinement effects change the behaviour of MOSFET devices. In this paper, we present a methodology by which to model the gate region of an n-Metal Oxide Semiconductor (MOS) device using a simplified version of the density-gradient equations. The resulting singularly perturbed ODEs are solved using an adaptive wavelet collocation method that adapts dynamically to the boundary layer. Our results are shown to be in good agreement with those from a direct numerical solution of the Schrodinger-Poisson system.
Year
DOI
Venue
2006
10.1504/IJCSE.2006.012763
IJCSE
Keywords
DocType
Volume
direct numerical solution,Schrodinger-Poisson system,adaptive wavelet collocation method,confinement effect,singular,multilevel solver,MOSFET device,density-gradient equation,quantum tunneling,adapts dynamically,mosfets,gate region,device length,boundary layer,quantum correction
Journal
2
Issue
ISSN
Citations 
3/4
1742-7185
0
PageRank 
References 
Authors
0.34
2
2
Name
Order
Citations
PageRank
Hedley Morris102.03
Alfonso Limon212.58