Paper Info
Title
Reliability of Metamorphic HEMTs for Power Applications
Abstract
The reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer (MHEMT) designed for power applications has been investigated by accelerated lifetime tests. MHEMTs manufactured before and after fabrication technology modifications, aiming at improvements of the stability of the gate contact and the ohmic resistance, are compared. By combining biased MHEMT tests with high temperature: storage tests of TLM structures fabricated on the same wafers, the effects of the process modifications can be evaluated separately. Due to the gate contact stabilization, the improved devices show almost no change of transconductance after a 300 h stress test at 4V bias and a channel temperature of 170degreesC. (C) 2002 Elsevier Science Ltd. All rights reserved.
Year
DOI
Venue
2002
10.1016/S0026-2714(02)00192-0
Microelectronics Reliability
Field
DocType
Volume
Metamorphic rock,Engineering,Reliability engineering
Journal
42
Issue
ISSN
Citations 
9
0026-2714
0
PageRank 
References 
Authors
0.34
0
4
Name
Order
Citations
PageRank
M. Dammann110.78
F. Benkhelifa200.34
M. Meng300.34
W. Jantz421.40