Name
Abstract | ||
|---|---|---|
This paper presents a practical self-recharging circuitry for DRAMs. The proposed self-recharging circuitry not only reduces the standby power by monitoring the voltage drop caused by the data loss of a memory cell but also adjusts the recharging period of the memory cell that results from leakage currents. The proposed design is insensitive to temperature variations. A 1-Kb DRAM using our design is fabritcated by a TSMC 0.35-µm 1P4M CMOS process. The physical measurement of the proposed design on silicon verifies the correctness of the proposed circuitry. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1109/TVLSI.2004.842878 | IEEE Trans. VLSI Syst. |
Keywords | Field | DocType |
physical measurement,cmos process,self- recharge,index terms— adaptive self-recharging circuitry,proposed self-recharging circuitry,dram,proposed circuitry,temperature-insensitive self-recharging circuitry,data loss,practical self-recharging circuitry,1-kb dram,leakage current,memory cell,proposed design,power generation,integrated circuit design,circuits,silicon,threshold voltage,indexing terms,temperature | Dram,Dynamic random-access memory,Standby power,Leakage (electronics),Computer science,Voltage drop,Electronic engineering,Integrated circuit design,Integrated circuit,Electrical engineering,Memory cell | Journal |
Volume | Issue | ISSN |
13 | 3 | 1063-8210 |
Citations | PageRank | References |
2 | 0.65 | 2 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chua-chin Wang | 1 | 474 | 107.39 |
| Yih-Long Tseng | 2 | 46 | 7.68 |
| Chih-Chiang Chiu | 3 | 12 | 2.10 |