Name
Title | ||
|---|---|---|
Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model |
Abstract | ||
|---|---|---|
A new empirical InGaP/GaAs heterojunction bipolar transistor (HBT) large-signal model including self-heating effects is presented. The model accounts for the inherent temperature dependence of the device characteristics due to ambient-temperature variation as well as self-heating. The model is accompanied by a simple extraction process, which requires only dc current-voltage (I-V) and multibias-po... |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1109/JSSC.2003.815929 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Gallium arsenide,Heterojunction bipolar transistors,Data mining,Electrical resistance measurement,Scattering parameters,Current measurement,Temperature dependence,Capacitance measurement,Parameter extraction,Predictive models | Journal | 38 |
Issue | ISSN | Citations |
9 | 0018-9200 | 0 |
PageRank | References | Authors |
0.34 | 1 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Raghavan | 1 | 8 | 1.80 |
| S. Venkataraman | 2 | 0 | 0.34 |
| B. Banerjee | 3 | 0 | 0.34 |
| Youngsuk Suh | 4 | 0 | 0.34 |
| Deukhyoun Heo | 5 | 207 | 21.20 |
| J. Laskar | 6 | 27 | 6.51 |